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Other articles related with "single event upset"：
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126103 |
Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌) |
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Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs |
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Chin. Phys. B
2022 Vol.31 (12): 126103-126103
[Abstract]
(309)
[HTML 0 KB]
[PDF 2300 KB]
(61)
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56106 |
Dong-Qing Li(李东青), Tian-Qi Liu(刘天奇), Pei-Xiong Zhao(赵培雄), Zhen-Yu Wu(吴振宇), Tie-Shan Wang(王铁山), and Jie Liu(刘杰) |
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Strategy to mitigate single event upset in 14-nm CMOS bulk FinFET technology |
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Chin. Phys. B
2022 Vol.31 (5): 56106-056106
[Abstract]
(415)
[HTML 1 KB]
[PDF 2993 KB]
(131)
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48502 |
Yin-Yong Luo(罗尹虹), Wei Chen(陈伟), Feng-Qi Zhang(张凤祁), and Tan Wang(王坦) |
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Influences of supply voltage on single event upsets and multiple-cell upsets in nanometer SRAM across a wide linear energy transfer range |
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Chin. Phys. B
2021 Vol.30 (4): 48502-
[Abstract]
(397)
[HTML 1 KB]
[PDF 1199 KB]
(55)
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36103 |
Li-Hua Mo(莫莉华), Bing Ye(叶兵), Jie Liu(刘杰), Jie Luo(罗捷), You-Mei Sun(孙友梅), Chang Cai(蔡畅), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), and Ze He(贺泽) |
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Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM |
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Chin. Phys. B
2021 Vol.30 (3): 36103-
[Abstract]
(355)
[HTML 1 KB]
[PDF 1226 KB]
(69)
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26101 |
Bing Ye(叶兵), Li-Hua Mo(莫莉华), Tao Liu(刘涛), Jie Luo(罗捷), Dong-Qing Li(李东青), Pei-Xiong Zhao(赵培雄), Chang Cai(蔡畅), Ze He(贺泽), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东), Jie Liu(刘杰) |
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Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device |
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Chin. Phys. B
2020 Vol.29 (2): 26101-026101
[Abstract]
(673)
[HTML 1 KB]
[PDF 2745 KB]
(172)
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98501 |
Jin-Shun Bi(毕津顺), Kai Xi(习凯), Bo Li(李博), Hai-Bin Wang(王海滨), Lan-Long Ji(季兰龙), Jin Li(李金), Ming Liu(刘明) |
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Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory |
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Chin. Phys. B
2018 Vol.27 (9): 98501-098501
[Abstract]
(644)
[HTML 1 KB]
[PDF 774 KB]
(186)
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96102 |
Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉) |
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Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory |
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Chin. Phys. B
2017 Vol.26 (9): 96102-096102
[Abstract]
(667)
[HTML 0 KB]
[PDF 551 KB]
(264)
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88501 |
Bing Ye(叶兵), Jie Liu(刘杰), Tie-Shan Wang(王铁山), Tian-Qi Liu(刘天奇), Jie Luo(罗捷), Bin Wang(王斌), Ya-Nan Yin(殷亚楠), Qing-Gang Ji(姬庆刚), Pei-Pei Hu(胡培培), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东) |
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Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell |
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Chin. Phys. B
2017 Vol.26 (8): 88501-088501
[Abstract]
(690)
[HTML 1 KB]
[PDF 1372 KB]
(243)
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96109 |
Hongxia Guo(郭红霞), Lili Ding(丁李利), Yao Xiao(肖尧), Fengqi Zhang(张凤祁), Yinhong Luo(罗尹虹), Wen Zhao(赵雯), Yuanming Wang(王园明) |
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Pattern dependence in synergistic effects of total dose onsingle-event upset hardness |
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Chin. Phys. B
2016 Vol.25 (9): 96109-096109
[Abstract]
(720)
[HTML 1 KB]
[PDF 325 KB]
(233)
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118503 |
Xiao Yao (肖尧), Guo Hong-Xia (郭红霞), Zhang Feng-Qi (张凤祁), Zhao Wen (赵雯), Wang Yan-Ping (王燕萍), Zhang Ke-Ying (张科营), Ding Li-Li (丁李利), Fan Xue (范雪), Luo Yin-Hong (罗尹虹), Wang Yuan-Ming (王园明) |
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Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation |
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Chin. Phys. B
2014 Vol.23 (11): 118503-118503
[Abstract]
(614)
[HTML 1 KB]
[PDF 252 KB]
(377)
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86104 |
Geng Chao (耿超), Xi Kai (习凯), Liu Tian-Qi (刘天奇), Gu Song (古松), Liu Jie (刘杰) |
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Simulation of temporal characteristics of ion-velocity susceptibility to single event upset effect |
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Chin. Phys. B
2014 Vol.23 (8): 86104-086104
[Abstract]
(604)
[HTML 1 KB]
[PDF 897 KB]
(330)
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29402 |
Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明) |
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Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells |
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Chin. Phys. B
2013 Vol.22 (2): 29402-029402
[Abstract]
(757)
[HTML 1 KB]
[PDF 348 KB]
(564)
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29401 |
Qin Jun-Rui(秦军瑞), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Liu Bi-Wei(刘必慰) |
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Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells |
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Chin. Phys. B
2012 Vol.21 (2): 29401-029401
[Abstract]
(1109)
[HTML 1 KB]
[PDF 1424 KB]
(1008)
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